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DMP2018LFK
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on)max
16m ? @ V GS = -4.5V
25m ? @ V GS = -2.0V
I D
T A = 25°C
-12.8A
-10A
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Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate up to 2kV
Lead Free by Design, RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Power management functions
Notebook PC Applications
Portable Equipment Applications
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Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
U-DFN2523-6
Pin 1
Gate
Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain
Gate
Protection
Diode
Source
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
DMP2018LFK-7
DMP2018LFK-13
Bottom View
Case
U-DFN2523-6
U-DFN2523-6
Equivalent Circuit
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P8 = Product Type Marking Code
P8
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
1 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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